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Search Results - Lindgren, Ann-Chatrin
Search Results - Lindgren, Ann-Chatrin
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Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates
by
Sareen, Alok
,
Lindgren, Ann-Chatrin
,
Lundgren, Per
,
Bengtsson, Stefan
Published in
Solid-state electronics
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Different strain relaxation mechanisms in strained Si/Si1−xGex/Si heterostructures by high dose B+ and BF2+ doping
by
Chen, ChangChun
,
Lindgren, Ann-Chatrin
,
Zhang, ShiLi
,
Zhu, DeZhang
,
Vantomme, A.
Published in
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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1/f noise in Si and Si0.7Ge0.3 pMOSFETs
by
von Haartman, M
,
Lindgren, A.C
,
Hellstrom, P.E
,
Malm, B.G
,
Zhang, Shi-Li
,
Ostling, M
Published in
IEEE transactions on electron devices
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Electrical characterization of low thermal budget gate oxides on Si/Si sub(0.8 )Ge sub(0.2)/Si substrates
by
Sareen, Alok
,
Lindgren, Ann-Chatrin
,
Lundgren, Per
,
Bengtsson, Stefan
Published in
Solid-state electronics
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Electrical characterization of low thermal budget gate oxides on Si/Si 0.8Ge 0.2/Si substrates
by
Sareen, Alok
,
Lindgren, Ann-Chatrin
,
Lundgren, Per
,
Bengtsson, Stefan
Published in
Solid-state electronics
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Different strain relaxation mechanisms in strained Si/Si 1− xGe x/Si heterostructures by high dose B + and BF 2+ doping
by
Chen, ChangChun
,
Lindgren, Ann-Chatrin
,
Zhang, ShiLi
,
Zhu, DeZhang
,
Vantomme, A.
Published in
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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A Novel Strained Si 0.7 Ge 0.3 Surface-Channel pMOSFET with an ALD TiN/Al 2 O 3 /HfAlO x /Al 2 O 3 Gate Stack
by
Wu, Dongping
,
Lindgren, Ann-Chatrin
,
Persson, Stefan
,
Sjöblom, Gustaf
,
von Haartman, Martin
,
Seger, Johan
,
Hellström, Per-Erik
,
Olsson, Jörgen
,
Blom, Hans-Olof
,
Zhang, Shi-Li
Published in
IEEE electron device letters
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Variation of Contact Resistivity with Ge in TiW/P+ SiGe Contacts
by
Persson, S
,
Wu, D
,
Lindgren, A-C
,
Hellström, P E
,
Zhang, S-L
Published in
Physica scripta
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