Search Results - Lee, Hwajune

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  1. 1
    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature by Lee, Hwajune, Kim, Byungwhan, Kwon, Sanghee

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  2. 2
    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH(4)-N(2) plasma at room temperature

    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH(4)-N(2) plasma at room temperature by Lee, Hwajune, Kim, Byungwhan, Kwon, Sanghee

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  3. 3
    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH 4–N 2 plasma at room temperature

    Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH 4–N 2 plasma at room temperature by Lee, Hwajune, Kim, Byungwhan, Kwon, Sanghee

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  4. 4
    MODELING OF THIN FILM PROCESS DATA USING A GENETIC ALGORITHM-OPTIMIZED INITIAL WEIGHT OF BACKPROPAGATION NEURAL NETWORK

    MODELING OF THIN FILM PROCESS DATA USING A GENETIC ALGORITHM-OPTIMIZED INITIAL WEIGHT OF BACKPROPAGATION NEURAL NETWORK by Kim, Byungwhan, Lee, Hwajune, Kim, Donghwan

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