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A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel
by
Choi, Seonjun
,
Kim, Bongsueg
,
Jeong, Jae Kyeong
,
Song, Yun Heub
Published in
IEEE transactions on electron devices
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Ieee Transactions On Electron Devices
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Charge Carrier Processes
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Doping
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Gallium
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Indium Gallium Zinc Oxide
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Ip Networks
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Leakage Current
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Leakage Currents
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Photonic Band Gap
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Sonos Devices
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