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Search Results - Grosgeorges, P.
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Experimental determination of the channel backscattering coefficient on 10–70nm-metal-gate Double-Gate transistors
by
Barral, Vincent
,
Poiroux, T.
,
Vinet, M.
,
Widiez, J.
,
Previtali, B.
,
Grosgeorges, P.
,
Le Carval, G.
,
Barraud, S.
,
Autran, J.L.
,
Munteanu, D.
,
Deleonibus, S.
Published in
Solid-state electronics
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TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties
by
Widiez, J.
,
Vinet, M.
,
Poiroux, T.
,
Holliger, P.
,
Previtali, B.
,
Grosgeorges, P.
,
Mouis, M.
,
Deleonibus, S.
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GeOI and SOI 3D monolithic cell integrations for high density applications
by
Batude, P.
,
Vinet, M.
,
Pouydebasque, A.
,
Le Royer, C.
,
Previtali, B.
,
Tabone, C.
,
Clavelier, L.
,
Michaud, S.
,
Valentian, A.
,
Thomas, O.
,
Rozeau, O.
,
Coudrain, P.
,
Leyris, C.
,
Romanjek, K.
,
Garros, X.
,
Sanchez, L.
,
Baud, L.
,
Roman, A.
,
Carron, V.
,
Grampeix, H.
,
Augendre, E.
,
Toffoli, A.
,
Allain, F.
,
Grosgeorges, P.
,
Mazzochi, V.
,
Tosti, L.
,
Andrieu, F.
,
Hartmann, J.-M.
,
Lafond, D.
,
Deleonibus, S.
,
Faynot, O.
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Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate Double-Gate transistors
by
Barral, Vincent
,
Poiroux, T.
,
Vinet, M.
,
Widiez, J.
,
Previtali, B.
,
Grosgeorges, P.
,
Le Carval, G.
,
Barraud, S.
,
Autran, J.L.
,
Munteanu, D.
,
Deleonibus, S.
Published in
Solid-state electronics
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Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
by
Barral, V.
,
Poiroux, T.
,
Rochette, F.
,
Vinet, M.
,
Barraud, S.
,
Faynot, O.
,
Tosti, L.
,
Andrieu, F.
,
Casse, M.
,
Previtali, B.
,
Ritzenthaler, R.
,
Grosgeorges, P.
,
Bernard, E.
,
LeCarval, G.
,
Munteanu, D.
,
Autran, J.L.
,
Deleonibus, S.
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A new method for hermeticity measurements using porous ultra low k dielectrics for sub-ppm moisture detection
by
Grange, H.
,
Danel, J.S.
,
Feldis, H.
,
Desloges, B.
,
Jousseaume, V.
,
Licitra, C.
,
Manquat, P.B.
,
Grosgeorges, P.
,
Fassi, B.
,
Sbiaa, Z.
,
Robert, P.
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Impact of ULK restoration techniques on propagation performance for interconnects of the 45 nm technology node and below
by
Gallitre, M.
,
Blampey, B.
,
Chaabouni, H.
,
Farcy, A.
,
Grosgeorges, P.
,
Lacrevaz, T.
,
Bermond, C.
,
Flechet, B.
,
Ancey, P.
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Impact of WSix Metal Gate Stoichiometry on Fully Depleted SOI MOSFETs Electrical Properties
by
Widiez, J.
,
Vinet, M.
,
Guillaumot, B.
,
Garros, X.
,
Minoret, S.
,
Poiroux, T.
,
Weber, O.
,
Thevenod, L.
,
Holliger, P.
,
Previtali, B.
,
Barral, V.
,
Sidi Ali Cherif, K.
,
Grosgeorges, C.P.
,
Toffoli, A.
,
Maitrejean, S.
,
Casse, M.
,
Martin, F.
,
Lafond, D.
,
Faynot, O.
,
Mouis, M.
,
Deleonibus, S.
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