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Search Results - Groeseneken, G.V.
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Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs
by
Kapila, G.
,
Kaczer, B.
,
Nackaerts, A.
,
Collaert, N.
,
Groeseneken, G.V.
Published in
IEEE electron device letters
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Two types of neutral electron traps generated in the gate silicon dioxide
by
Wei Dong Zhang
,
Zhang, J.F.
,
Lalor, A.
,
Burton, D.
,
Groeseneken, G.V.
,
Degraeve, R.
Published in
IEEE transactions on electron devices
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Observation of single interface traps in submicron MOSFET's by charge pumping
by
Groeseneken, G.V.
,
De Wolf, I.
,
Bellens, R.
,
Maes, H.E.
Published in
IEEE transactions on electron devices
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Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
by
Van den bosch, G.
,
Groeseneken, G.V.
,
Heremans, P.
,
Maes, H.E.
Published in
IEEE transactions on electron devices
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High-[kappa] Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality--A Mobility Study
by
Trojman, L
,
Ragnarsson, L.-A
,
O'Sullivan, B.J
,
Rosmeulen, M
,
Kaushik, V.S
,
Groeseneken, G.V
,
Maes, H.E
,
De Gendt, S
,
Heyns, M
Published in
IEEE transactions on electron devices
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Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique
by
Wouters, D.J.
,
Tack, M.R.
,
Groeseneken, G.V.
,
Maes, H.E.
,
Claeys, C.L.
Published in
IEEE transactions on electron devices
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Hot carrier degradation and ESD in submicrometer CMOS technologies: how do they interact?
by
Groeseneken, G.V.
Published in
IEEE transactions on device and materials reliability
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Influence of tester, test method, and device type on CDM ESD testing
by
Verhaege, K.
,
Groeseneken, G.V.
,
Maes, H.E.
,
Egger, P.
,
Gieser, H.
Published in
IEEE transactions on components, packaging, and manufacturing technology. Part A
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Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics
by
Roussel, P.J.
,
Degraeve, R.
,
Van den Bosch, G.V.
,
Kaczer, B.
,
Groeseneken, G.
Published in
IEEE transactions on device and materials reliability
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