GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices by Chernykh, M.Y., Andreev, A.A., Ezubchenko, I.S., Chernykh, I.A., Mayboroda, I.O., Kolobkova, E.M., Khrapovitskaya, Yu. V., Grishchenko, J.V., Perminov, P.A., Sedov, V.S., Martyanov, A.K., Altakhov, A.S., Komlenok, M.S., Pashinin, V.P., Sinogeykin, A.G., Konov, V.I., Zanaveskin, M.L.

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Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal by Maiboroda, I. O., Grishchenko, J. V., Ezubchenko, I. S., Sokolov, I. S., Chernych, I. A., Andreev, A. A., Zanaveskin, M. L.

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