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Search Results - Darmawi-Iskandar, Patrick K.
Search Results - Darmawi-Iskandar, Patrick K.
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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
by
Niroula, John
,
Xie, Qingyun
,
Rajput, Nitul S.
,
Darmawi-Iskandar, Patrick K.
,
Rahman, Sheikh Ifatur
,
Luo, Shisong
,
Palash, Rafid Hassan
,
Sikder, Bejoy
,
Yuan, Mengyang
,
Yadav, Pradyot
,
Micale, Gillian K.
,
Chowdhury, Nadim
,
Zhao, Yuji
,
Rajan, Siddharth
,
Palacios, Tomás
Published in
Applied physics letters
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
by
Xie, Qingyun
,
Niroula, John
,
Rajput, Nitul S.
,
Yuan, Mengyang
,
Luo, Shisong
,
Fu, Kai
,
Isamotu, Mohamed Fadil
,
Palash, Rafid Hassan
,
Sikder, Bejoy
,
Eisner, Savannah R.
,
Surdi, Harshad
,
Belanger, Aidan J.
,
Darmawi-Iskandar, Patrick K.
,
Aksamija, Zlatan
,
Nemanich, Robert J.
,
Goodnick, Stephen M.
,
Senesky, Debbie G.
,
Hunter, Gary W.
,
Chowdhury, Nadim
,
Zhao, Yuji
,
Palacios, Tomás
Published in
Applied physics letters
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Total-Ionizing-Dose Effects and Low-Frequency Noise in N-type Carbon Nanotube Field-Effect Transistors with HfO2 Gate Dielectrics
by
Darmawi-Iskandar, Patrick K.
,
Aaron, Andrew M.
,
Zhang, En Xia
,
Bhuva, Bharat L.
,
Kauppila, Jeffery S.
,
Davidson, Jim L.
,
Alles, Michael L.
,
Fleetwood, Daniel M.
,
Massengill, Lloyd W.
Published in
IEEE transactions on nuclear science
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Applied Physics Letters
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Ieee Transactions On Nuclear Science
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Science & Technology
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Semiconductor Devices
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Aluminum Gallium Nitrides
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Gallium Nitrides
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High Electron Mobility Transistors
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High Temperature
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Physical Sciences
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Physics, Applied
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1/F
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Border Traps
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Carbon
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Carbon Nanotubes
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Cntfet
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Cntfets
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Contact Resistance
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American Institute Of Physics:jisc Collections:transitional Journals Agreement 2021-23 (Reading List)
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American Institute Of Physics
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