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Search Results - CHELNIY, A. A
Search Results - CHELNIY, A. A
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Hydrogen passivation effects in InGaAlP and InGaP
by
Gorbylev, V. A.
,
Chelniy, A. A.
,
Polyakov, A. Y.
,
Pearton, S. J.
,
Smirnov, N. B.
,
Wilson, R. G.
,
Milnes, A. G.
,
Cnekalin, A. A.
,
Govorkov, A. V.
,
Leiferov, B. M.
,
Borodina, O. M.
,
Balmashnov, A. A.
Published in
Journal of applied physics
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Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
by
Polyakov, A.Y
,
Chelniy, A.A
,
Govorkov, A.V
,
Smirnov, N.B
,
Milnes, A.G
,
Pearton, S.J
,
Wilson, R.G
,
Balmashnov, A.A
,
Aluev, A.N
,
Markov, A.V
Published in
Solid-state electronics
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Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
by
Polyakov, A.Y.
,
Smirnov, N.B.
,
Govorkov, A.V.
,
Chelniy, A.A.
,
Milnes, A.G.
,
Li, Xiaolei
,
Leiferov, B.M.
,
Aluev, A.N.
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
by
Polyakov, A.Y.
,
Smirnov, N.B.
,
Chelniy, A.A.
,
Balmashnov, A.A.
,
Milnes, A.G.
,
Pearton, S.J.
Published in
Solid-state electronics
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The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
by
Polyakov, A.Y.
,
Chelniy, A.A.
,
Smirnov, N.B.
,
Govorkov, A.V.
,
Milnes, A.G.
,
Li, Xiaolei
,
Aluev, A.N.
,
Orlov, P.B.
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
by
POLYAKOV, A. Y
,
CHELNIY, A. A
,
SMIRNOV, N. B
,
GOVORKOV, A. V
,
MILNES, A. G
,
LI, X
,
ALUEV, A. N
,
ORLOV, P. B
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
by
POLYAKOV, A. Y
,
SMIRNOV, N. B
,
GOVORKOV, A. V
,
CHELNIY, A. A
,
MILNES, A. G
,
LI, X
,
LEIFEROV, B. M
,
ALUEV, A. N
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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8
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The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
by
POLYAKOV, A. Y
,
SMIRNOV, N. B
,
CHELNIY, A. A
,
BALMASHNOV, A. A
,
MILNES, A. G
,
PEARTON, S. J
Published in
Solid-state electronics
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9
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Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
by
POLYAKOV, A. Y
,
CHELNIY, A. A
,
GOVORKOV, A. V
,
SMIRNOV, N. B
,
MILNES, A. G
,
PEARTON, S. J
,
WILSON, R. G
,
BALMASHNOV, A. A
,
ALUEV, A. N
,
MARKOV, A. V
Published in
Solid-state electronics
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