EBV DNA increase in COVID-19 patients with impaired lymphocyte subpopulation count by Paolucci, Stefania, Cassaniti, Irene, Novazzi, Federica, Fiorina, Loretta, Comolli, Giuditta, Bruno, Raffaele, Gulminetti, Roberto, Novati, Stefano, Bruno, R, Brunetti, E, Di Matteo, A, Seminari, E, Maiocchi, L, Pagnucco, L, Mariani, B, Ludovisi, S, Gulminetti, R, Novati, S, Vecchia, M, Sciarra, M, Colaneri, M, Di Filippo, A, Sambo, M, Biscarini, S, Roda, S, Pieri, TC, Gallazzi, I, Sachs, M, Valsecchi, P, Perlini, S, Bonzano, M, Crescenzi, G, Falchi, AG, Guarnone, R, Quaglia, F, Sabena, A, Speciale, F, Zunino, I, Secco, G, Maisak, I, Chiodi, B, Sciarrini, M, Barcella, B, Moroni, L, Vignaroli, D, Bazzini, M, Belliato, M, Perotti, L, Mongodi, S, Tavazzi, G, Marseglia, G, Licari, A, Comolli, G, Corbella, M, Daturi, R, Furione, M, Marone, P, Percivalle, E, Piralla, A, Zavattoni, M, Adzasehoun, G, Ardizzone, M, Bellotti, L, Brunco, V, Cabano, E, Capella, L, Frisco, G, Garbagnoli, G, Gardellini, F, Girello, A, Guerrizio, A, Lucchelli, C, Maliardi, V, Zanello, C, Bagnarino, J, Bergami, F, Caneva, G, Corcione, A, Di Martino, R, Gallone, A, Merla, C, Novazzi, F, Rossi, B, Saveriaempillai, G, Tallarita, M, Vecchio Nepita, E, Vitali, J, Cerino, A, Oliviero, B, Mantovani, S, Mele, D, Calvi, M, Tizzoni, M, Nicora, C, Triarico, A, Muzzi, A, Lago, P, Novelli, V, Comandatore, F, Bandi, C

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Detection of the SARS‐CoV‐2 in different biologic specimens from positive patients with COVID‐19, in Northern Italy by Piralla, Antonio, Bruno, Raffaele, Baldanti, Fausto, Brunetti, E, Di Matteo, A, Seminari, E, Zuccaro, V, Pagnucco, L, Mariani, B, Ludovisi, S, Lissandrin, R, Parisi, A, Michelone, G, Zanaboni, D, Novati, S, Orsolini, P, Vecchia, M, Sciarra, M, Colaneri, M, Di Filippo, A, Sambo, M, Lupi, M, Roda, S, Pieri, TC, Sachs, M, Valsecchi, P, Bonzano, M, Briganti, F, Crescenzi, G, Falchi, AG, Guarnone, R, Guglielmana, B, Maggi, E, Martino, I, Speciale, F, Zunino, I, Secco, G, Cappa, G, Chiodi, B, Barcella, B, Resta, F, Moroni, L, Zattera, C, Tassi, MF, Bazzini, M, Belliato, M, Perotti, L, Tavazzi, G, Licari, A, Barbarini, D, Cambieri, P, Cavanna, C, Comolli, G, Daturi, R, Monzillo, E, Parea, M, Percivalle, E, Rovida, F, Adzasehoun, G, Ardizzone, M, Bellotti, L, Capella, L, Devitis, D, Dossena, L, Frisco, G, Girello, A, Landini, V, Maliardi, V, Piemontese, P, Pezzaia, S, Premoli, M, Rebuffa, C, Bagnarino, J, Bergami, F, Bonetti, A, Caneva, G, Corcione, A, Di Martino, R, Ferrari, A, Ferrari, G, Fiorina, L, Gallone, A, Giardina, F, Mercato, A, Ratano, G, Sciabica, IM, Tallarita, M, Vitali, J, Cerino, A, Varchetta, S, Tizzoni, M, Nicora, C, Petronella, V, Marena, C, Muzzi, A, Cutti, S, Batisti Biffignandi, G, Rettani, M, Ferrari, A, Marseglia, Gian Luigi

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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates by Terzieva, V., Souriau, L., Caymax, M., Brunco, D.P., Moussa, A., Van Elshocht, S., Loo, R., Clemente, F., Satta, A., Meuris, Marc

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs by Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators by Afanas'ev, V. V., Shamuilia, S., Stesmans, A., Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Houssa, M., Brunco, D. P.

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Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients by Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas’ev, V. V., Shamuilia, S., Stesmans, A.

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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams by AFANAS'EV, V. V, STESMANS, A, DELABIE, A, BELLENGER, F, HOUSSA, M, LIETEN, R. R, MERCKLING, C, PENAUD, J, BRUNCO, D. P, MEURIS, M

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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process by Mitard, J., Witters, L., Loo, R., Lee, S. H., Sun, J. W., Franco, J., Ragnarsson, Lars-Ake, Brand, A., Lu, X., Yoshida, N., Eneman, G., Brunco, D. P., Vorderwestner, M., Storck, P., Milenin, A. P., Hikavyy, A., Waldron, N., Favia, P., Vanhaeren, D., Vanderheyden, A., Olivier, R., Mertens, H., Arimura, H., Sonja, S., Vrancken, C., Bender, H., Eyben, P., Barla, K., Lee, S.-G, Horiguchi, N., Collaert, N., Thean, A. V.-Y

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Germanium: The Past and Possibly a Future Material for Microelectronics by Brunco, David P., De Jaeger, Brice, Eneman, Geert, Satta, Alessandra, Terzieva, Valentina, Souriau, Laurent, Leys, Frederik E., Pourtois, Geoffrey, Houssa, Michel, Opsomer, Karl, Nicholas, Gareth, Meuris, Marc, Heyns, Marc

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Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks by LI, Z, SCHRAM, T, DEWEERD, W, NAOKI, Y, LEHNEN, P, DE GENDT, S, DE MEYER, K, PANTISANO, L, STESMANS, A, CONARD, T, SHAMUILIA, S, AFANASIEV, V. V, AKHEYAR, A, VAN ELSHOCHT, S, BRUNCO, D. P

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Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface by Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas’ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.

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Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions by Ragnarsson, L.-A., Severi, S., Trojman, L., Johnson, K.D., Brunco, D.P., Aoulaiche, M., Houssa, M., Kauerauf, T., Degraeve, R., Delabie, A., Kaushik, V.S., De Gendt, S., Tsai, W., Groeseneken, G., Kristin De Meyer, Heyns, M.

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Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins by Mertens, H., Ritzenthaler, R., Hikavyy, A., Franco, J., Lee, J. W., Brunco, D. P., Eneman, G., Witters, L., Mitard, J., Kubicek, S., Devriendt, K., Tsvetanova, D., Milenin, A. P., Vrancken, C., Geypen, J., Bender, H., Groeseneken, G., Vandervorst, W., Barla, K., Collaert, N., Horiguchi, N., Thean, A. V.-Y

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Mechanism of O 2-anneal induced V fb shifts of Ru gated stacks by Li, Z., Schram, T., Pantisano, L., Stesmans, A., Conard, T., Shamuilia, S., Afanasiev, V.V., Akheyar, A., Van Elshocht, S., Brunco, D.P., Deweerd, W., Naoki, Y., Lehnen, P., De Gendt, S., De Meyer, K.

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Ruthenium gate electrodes on Si O 2 and Hf O 2 : Sensitivity to hydrogenand oxygen ambients by Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas'ev, V. V., Shamuilia, S., Stesmans, A.

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Flatband voltage shift of ruthenium gated stacks and its linkwith the formation of a thin ruthenium oxide layerat the ruthenium/dielectric interface by Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas'ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.

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Influence of passivating interlayer on Ge/HfO sub(2 and Ge/Al) sub(2)O sub(3 interface band diagrams) by Afanas'ev, V V, Stesmans, A, Delabie, A, Bellenger, F, Houssa, M, Lieten, R R, Merckling, C, Penaud, J, Brunco, D P, Meuris, M

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Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit by Meuris, Marc M., Martens, K., De Jaegar, B., Van Steenbergen, J., Bonzom, Renaud, Caymax, Matty R., Houssa, M., Kaczer, Ben, Leys, Frederik, Nelis, Daniel, Opsomer, Karl, Pourghaderi, A. M., Satta, A., Simoen, Eddy R., Terzieva, Valentina, Souriau, Laurent, Bellenger, F., Brammertz, Guy, Nicholas, G., Scarozza, M., Huyghebaert, C., Winderickx, Gillis, Loo, Roger, Clarysse, Trudo, Conard, Thierry, Bender, Hugo, Benedetti, Alessandro, Todi, R., Delabie, A., Hellin, David, Van Daele, Benny, Sioncke, Sonja, Mertens, Paul W., De Meyer, Krtistien, Van Elshocht, Sven, Vandervorst, Wilfried, Zimmerman, Paul, Brunco, David P., Heyns, Marc M.

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High-k gate stack engineering : Towards meeting low standby power and high performance targets by DE GENDT, S, BRUNCO, D, KAUSHIK, V, KUBICEK, S, MAES, J, PANTISANO, L, RAGNARSSON, L, ROHR, E, SCHRAM, T, SHIMAMOTO, Y, SLEECKX, E, VANDERVORST, W, CAYMAX, M, VAN ELSHOCHT, S, YAMAMOTO, K, WINERS, T, ZHAO, C, ZIMMERMAN, P, HEYNS, M, CONARD, T, DATE, L, DELABIE, A, DEWEERD, W, GROESENEKEN, G, HOUSAA, M, HYUN, S

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