Search Results - Boroumand, F.A.

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  1. 1
    Comments on "Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss"

    Comments on "Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss" by Woods, R.C., Boroumand, F.A.

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  2. 2
    Polyfluorene copolymer /Al Schottky junction for UV-A photodetector with relatively high stability and photocurrent density

    Polyfluorene copolymer /Al Schottky junction for UV-A photodetector with relatively high stability and photocurrent density by Azadinia, M., Boroumand, F.A., Fathollahi, M.R., Mohajerani, E.

    Published in Optics communications
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  3. 3
    Nanoscale Conjugated-Polymer Light-Emitting Diodes

    Nanoscale Conjugated-Polymer Light-Emitting Diodes by Boroumand, Farhad A, Fry, Paul W, Lidzey, David G

    Published in Nano letters
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  4. 4
    Observations of backgate impedance dispersion in GaAs isolation structures

    Observations of backgate impedance dispersion in GaAs isolation structures by Boroumand, F.A., Swanson, J.G.

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  5. 5
    Very slow charge trapping and release in ion implanted GaAs [MESFETs]

    Very slow charge trapping and release in ion implanted GaAs [MESFETs] by Chiu, C.-H., Boroumand, F.A., Swanson, J.G.

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  6. 6
    Resonant and negative resistive currents between isolated GaAs device structures

    Resonant and negative resistive currents between isolated GaAs device structures by Boroumand, F.A., Reilly, M.A., Swanson, J.G.

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    Conference Proceeding
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  7. 7
    Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

    Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures by Boroumand, F.A., Khalid, A.H., Hopkinson, M., Swanson, J.G.

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  8. 8
    A comprehensive model of backgate impedance dispersions in GaAs isolation structures

    A comprehensive model of backgate impedance dispersions in GaAs isolation structures by Boroumnd, F.A., Swanson, J.G.

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