50 nm Vertical Replacement-Gate (VRG) pMOSFETs by Sang-Hyun Oh, Hergenrother, J.M., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Mansfield, W.M., Baker, M.R., Barr, D.L., Baumann, F.H., Bolan, K.J., Boone, T., Ciampa, N.A., Cirelli, R.A., Eaglesham, D.J., Ferry, E.J., Fiory, A.T., Frackoviak, J., Garno, J.P., Gossmann, H.J., Grazul, J.L., Green, M.L., Hillenius, S.J., Johnson, R.W., Keller, R.C., King, C.A., Kleiman, R.N., Lee, J.T.-C., Miner, J.F., Morris, M.D., Rafferty, C.S., Rosamilia, J.M., Short, K., Sorsch, T.W., Timko, A.G., Weber, G.R., Wilk, G.D., Plummer, J.D.

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The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length by Hergenrother, J.M., Monroe, D., Klemens, F.P., Komblit, A., Weber, G.R., Mansfield, W.M., Baker, M.R., Baumann, F.H., Bolan, K.J., Bower, J.E., Ciampa, N.A., Cirelli, R.A., Colonell, J.I., Eaglesham, D.J., Frackoviak, J., Gossmann, H.J., Green, M.L., Hillenius, S.J., King, C.A., Kleiman, R.N., Lai, W.Y.C., Lee, J.T.-C., Liu, R.C., Maynard, H.L., Morris, M.D., Oh, S.-H., Pai, C.-S., Rafferty, C.S., Rosamilia, J.M., Sorsch, T.W., Vuong, H.-H.

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