Search Results - Balasooriya, Thilina N.

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    GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)

    GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE) by Gurijala, Aashi R., Chow, Amber A., Khanna, Shaurya, Suresh, Nikhil C., Penmatcha, Pranav V., Jandhyala, Siddarth V., Sahal, Mohammed, Peng, Wesley, Balasooriya, Thilina N., Ram, Sukesh, Diaz, Timoteo, Bertram, Michelle, Cornejo, Christian E., Kavanagh, Karen L., Culbertson, Robert J., Herbots, Nicole

    Published in SILICON
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