Local threshold for segmented attenuation correction of PET imaging of the thorax

by Xu, M., Luk, W.K., Cutler, P.D., Digby, W.M.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Model for the dose, dose-rate and temperature dependence of radiation-induced loss in optical fibers

by Griscom, D.L., Gingerich, M.E., Friebele, E.J.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Nd(3+) and Pr(3+) doped inorganic scintillators

by van Eijk, C W E, Dorenbos, P, Visser, R
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Design and engineering aspects of a high resolution positron tomograph for small animal imaging

by Lecomte, R., Cadorette, J., Richard, P., Rodrigue, S., Rouleau, D.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Parameter estimation of finite mixtures using the EM algorithm and information criteria with application to medical image processing

by Liang, Z., Jaszczak, R.J., Coleman, R.E.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Geometrical factors in SEE rate calculations

by Petersen, E.L., Pickel, J.C., Smith, E.C., Rudeck, P.J., Letaw, J.R.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Random telegraph signals from proton-irradiated CCDs

by Hopkins, I.H., Hopkinson, G.R.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

An analog-to-digital conversion based on a moving window deconvolution

by Georgiev, A., Gast, W., Lieder, R.M.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

A 2-dimensional detector decoding study on BGO arrays with quadrant sharing photomultipliers

by Wai-Hoi Wong, Uribe, J., Hicks, K., Zambelli, M.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Cerium-doped orthophosphates: new promising scintillators

by Lempicki, A., Berman, E., Wojtowicz, A.J., Balcerzyk, M., Boatner, L.A.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Bounding the total-dose response of modern bipolar transistors

by Kosier, S.L., Combs, W.E., Wei, A., Schrimpf, R.A., Fleetwood, D.M., DeLaus, M., Pease, R.L.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Single-event current transients induced by high energy ion microbeams

by Nashiyama, I., Hirao, T., Kamiya, T., Yutoh, H., Nishijima, T., Sekiguti, H.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Charge generation and collection in p-n junctions excited with pulsed infrared lasers

by Johnston, A.H.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

by Velazco, R., Bessot, D., Duzellier, S., Ecoffet, R., Koga, R.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

by Barry, A.L., Lehmann, B., Fritsch, D., Braunig, D.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

A conceptual model of a single-event gate-rupture in power MOSFETs

by Brews, J.R., Allenspach, M., Schrimpf, R.D., Galloway, K.F., Titus, J.L., Wheatley, C.F.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Total dose failures in advanced electronics from single ions

by Oldham, T.R., Bennett, K.W., Beaucour, J., Carriere, T., Polvey, C., Garnier, P.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

A fast, low power, amplifier-shaper-discriminator for high rate straw tracking systems

by Newcomer, F.M., Tedja, S., Van Berg, R., Van der Spiegel, J., Williams, H.H.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Evaluation of SEGR threshold in power MOSFETs

by Allenspach, M., Brews, J.R., Mouret, I., Schrimpf, R.D., Galloway, K.F.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes

by Dale, C.J., Chen, L., McNulty, P.J., Marshall, P.W., Burke, E.A.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)